THE PREPARATION OF INAS1-XSBX ALLOYS AND STRAINED-LAYER SUPERLATTICES BY MOCVD

被引：29

作者：

BIEFELD, RM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90329-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：392 / 399

页数：8

共 24 条

[11] ALMOST PERFECT EPITAXIAL MULTILAYERS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :989-991

[12] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280

[13] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273

[14] MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY MOCVD [J].

MORI, H ;

TAKAGISHI, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :23-28

[15] EPITAXIAL-GROWTH OF INAS1-XSBX ALLOYS BY MOCVD [J].

NATAF, G ;

VERIE, C .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :87-91

[16] INASSB STRAINED-LAYER SUPERLATTICES FOR LONG WAVELENGTH DETECTOR APPLICATIONS [J].

OSBOURN, GC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :176-178

[17]

Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

[18] OMVPE GROWTH OF GAAS1-XSBX - SOLID COMPOSITION [J].

STRINGFELLOW, GB ;

CHERNG, MJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (02) :413-415

[19] THERMODYNAMIC ASPECTS OF OMVPE [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :133-139

[20] A CRITICAL-APPRAISAL OF GROWTH MECHANISMS IN MOVPE [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :111-122

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