THERMODYNAMIC ASPECTS OF OMVPE

被引:60
作者
STRINGFELLOW, GB
机构
关键词
D O I
10.1016/0022-0248(84)90258-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:133 / 139
页数:7
相关论文
共 18 条
[1]   GAAS1-XSBX GROWTH BY OMVPE [J].
CHERNG, MJ ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) :799-813
[2]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].
CHERNG, MJ ;
STRINGFELLOW, GG ;
COHEN, RM .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679
[3]  
COATES GE, 1967, ORGANOMETALLIC COMPO, V1
[4]  
DIDCHENKO R, 1960, J INORG CHEM, V4, P35
[5]   PROPERTIES OF INP FILMS GROWN BY ORGANOMETALLIC VPE METHOD [J].
FUKUI, T ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L395-L397
[6]   ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS [J].
FUKUI, T ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L53-L56
[7]   OMVPE GROWTH OF INP USING TMIN [J].
HSU, CC ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :8-12
[8]   OMVPE GROWTH OF GAINP [J].
HSU, CC ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :648-650
[9]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM [J].
KUO, CP ;
YUAN, JS ;
COHEN, RM ;
DUNN, J ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1984, 44 (05) :550-552
[10]   OMVPE GROWTH OF GAINAS [J].
KUO, CP ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) :461-470