MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY MOCVD

被引：17

作者：

MORI, H ^{[1
]}

TAKAGISHI, S ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90005-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：23 / 28

页数：6

共 11 条

[1] HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE [J].

BALIGA, BJ ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1974, 26 (02) :314-316

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178

[3] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[4] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].

DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[5]

DUCHEMIN JP, 1982, I PHYS C SER, V63, P89

[6] ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW [J].

DUPUIS, RD .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :213-222

[7]

JACKSON KA, 1975, TREATISE SOLID STATE, V5, P233

[8] GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS [J].

NAKANISI, T ;

UDAGAWA, T ;

TANAKA, A ;

KAMEI, K .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :255-262

[9] MORPHOLOGY OF ORGANOMETALLIC CVD GROWN GAAS EPITAXIAL LAYERS [J].

REEP, DH ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :449-457

[10] EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD [J].

TAKAGISHI, S ;

MORI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L795-L797

← 1 2 →