MORPHOLOGY OF ORGANOMETALLIC CVD GROWN GAAS EPITAXIAL LAYERS

被引:47
作者
REEP, DH
GHANDHI, SK
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关键词
D O I
10.1016/0022-0248(83)90173-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:449 / 457
页数:9
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共 33 条
[1]   TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (06) :927-&
[2]   GAAS PHOTO-CATHODES FOR LOW LIGHT LEVEL IMAGING [J].
ANDRE, JP ;
GUITTARD, P ;
HALLAIS, J ;
PIAGET, C .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :235-245
[3]   HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF CRYSTAL GROWTH, 1974, 26 (02) :314-316
[4]  
BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[5]   VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS [J].
BHAT, R ;
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1378-1382
[6]   COMPARISON OF FET PERFORMANCE VERSUS MATERIAL GROWTH TECHNIQUES [J].
BONNET, M ;
VISENTIN, N ;
BESSONNEAU, G ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :246-254
[8]   GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES [J].
CADORET, R ;
HOLLAN, L ;
LOYAU, JB ;
OBERLIN, M ;
OBERLIN, A .
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (02) :187-194
[10]   INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS [J].
EWING, RE ;
GREENE, PE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) :1266-1269