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MORPHOLOGY OF ORGANOMETALLIC CVD GROWN GAAS EPITAXIAL LAYERS
被引:47
作者
:
REEP, DH
论文数:
0
引用数:
0
h-index:
0
REEP, DH
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1983年
/ 61卷
/ 03期
关键词
:
D O I
:
10.1016/0022-0248(83)90173-2
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:449 / 457
页数:9
相关论文
共 33 条
[1]
TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
;
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(06)
:927
-&
[2]
GAAS PHOTO-CATHODES FOR LOW LIGHT LEVEL IMAGING
[J].
ANDRE, JP
论文数:
0
引用数:
0
h-index:
0
ANDRE, JP
;
GUITTARD, P
论文数:
0
引用数:
0
h-index:
0
GUITTARD, P
;
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
HALLAIS, J
;
PIAGET, C
论文数:
0
引用数:
0
h-index:
0
PIAGET, C
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:235
-245
[3]
HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF CRYSTAL GROWTH,
1974,
26
(02)
:314
-316
[4]
BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[5]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
;
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1378
-1382
[6]
COMPARISON OF FET PERFORMANCE VERSUS MATERIAL GROWTH TECHNIQUES
[J].
BONNET, M
论文数:
0
引用数:
0
h-index:
0
BONNET, M
;
VISENTIN, N
论文数:
0
引用数:
0
h-index:
0
VISENTIN, N
;
BESSONNEAU, G
论文数:
0
引用数:
0
h-index:
0
BESSONNEAU, G
;
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:246
-254
[7]
MOCVD GROWTH AND CHARACTERIZATION OF GAALAS-GAAS DOUBLE HETEROSTRUCTURES FOR OPTO-ELECTRONIC DEVICES
[J].
BRADLEY, RR
论文数:
0
引用数:
0
h-index:
0
BRADLEY, RR
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:223
-228
[8]
GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES
[J].
CADORET, R
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
CADORET, R
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
HOLLAN, L
;
LOYAU, JB
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
LOYAU, JB
;
OBERLIN, M
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, M
;
OBERLIN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, A
.
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(02)
:187
-194
[9]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
[J].
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
.
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
:189
-+
[10]
INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS
[J].
EWING, RE
论文数:
0
引用数:
0
h-index:
0
EWING, RE
;
GREENE, PE
论文数:
0
引用数:
0
h-index:
0
GREENE, PE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(11)
:1266
-1269
←
1
2
3
4
→
共 33 条
[1]
TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
;
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(06)
:927
-&
[2]
GAAS PHOTO-CATHODES FOR LOW LIGHT LEVEL IMAGING
[J].
ANDRE, JP
论文数:
0
引用数:
0
h-index:
0
ANDRE, JP
;
GUITTARD, P
论文数:
0
引用数:
0
h-index:
0
GUITTARD, P
;
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
HALLAIS, J
;
PIAGET, C
论文数:
0
引用数:
0
h-index:
0
PIAGET, C
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:235
-245
[3]
HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF CRYSTAL GROWTH,
1974,
26
(02)
:314
-316
[4]
BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[5]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
[J].
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
;
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
:1378
-1382
[6]
COMPARISON OF FET PERFORMANCE VERSUS MATERIAL GROWTH TECHNIQUES
[J].
BONNET, M
论文数:
0
引用数:
0
h-index:
0
BONNET, M
;
VISENTIN, N
论文数:
0
引用数:
0
h-index:
0
VISENTIN, N
;
BESSONNEAU, G
论文数:
0
引用数:
0
h-index:
0
BESSONNEAU, G
;
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:246
-254
[7]
MOCVD GROWTH AND CHARACTERIZATION OF GAALAS-GAAS DOUBLE HETEROSTRUCTURES FOR OPTO-ELECTRONIC DEVICES
[J].
BRADLEY, RR
论文数:
0
引用数:
0
h-index:
0
BRADLEY, RR
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:223
-228
[8]
GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES
[J].
CADORET, R
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
CADORET, R
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
HOLLAN, L
;
LOYAU, JB
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
LOYAU, JB
;
OBERLIN, M
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, M
;
OBERLIN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, A
.
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(02)
:187
-194
[9]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
[J].
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
.
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
:189
-+
[10]
INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS
[J].
EWING, RE
论文数:
0
引用数:
0
h-index:
0
EWING, RE
;
GREENE, PE
论文数:
0
引用数:
0
h-index:
0
GREENE, PE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(11)
:1266
-1269
←
1
2
3
4
→