PREPARATION OF III-V COMPOUND SEMICONDUCTORS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：8

作者：

BIEFELD, RM

机构：

来源：

INDUSTRIAL & ENGINEERING CHEMISTRY PRODUCT RESEARCH AND DEVELOPMENT | 1982年 / 21卷 / 04期

关键词：

D O I：

10.1021/i300008a001

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

引用

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页码：525 / 528

页数：4

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共 26 条

[1] HILLOCKS ON EPITAXIAL GAAS GROWN FROM TRIMETHYLGALLIUM AND ARSINE
BALIGA, BJ
GHANDHI, SK
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 26 (02) : 314 - 316
[2] GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM
BASS, SJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 29 - 33
[3] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[4] BAUGHMAN RJ, 1981, 5TH INT C VAP GROWTH
[5] THE PREPARATION OF DEVICE QUALITY GALLIUM-PHOSPHIDE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 382 - 388
[6] BLAKESLEE AE, 1980, 1980 P EL MAT C ITH, P48
[7] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC
COOPER, CB
LUDOWISE, MJ
AEBI, V
MOON, RL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 299 - 309
[8] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
GARNER, CM
SU, CY
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 335 - 337
[9] HESS KL, 1981, 1981 EL MAT C SANT B, P31
[10] ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 73 - 75