Early stages of epitaxial growth of vanadium oxide at the TiO2(110) surface studied by photoelectron diffraction

被引：36

作者：

Sambi, M

Sangiovanni, G

Granozzi, G

Parmigiani, F

机构：

[1] UNIV PADUA,CNR,CTR STUDIO STABILITA REATTIVITA COMPOSTI COORDINA,I-35131 PADUA,ITALY

[2] IST NAZL FIS NUCL,I-20133 MILAN,ITALY

[3] POLITECN MILAN,DIPARTIMENTO FIS,I-20133 MILAN,ITALY

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.54.13464

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports experimental evidence for an incipient epitaxial growth of vanadium oxide at the TiO2(110) surface. This finding is based on a x-ray photoelectron diffraction and low-energy electron diffraction study of a submonolayer of vanadium deposited at the TiO2(110) surface, performed after annealing at 473 Ii in ultrahigh vacuum conditions. The data unambiguously show that vanadium atoms occupy selected sixfold-coordinated titanium sites which underbridge oxygen atoms of the topmost layer and that the TiO2(110) long-range surface structural order is preserved.

引用

页码：13464 / 13467

页数：4

共 30 条

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