Intermediate temperature grown GaAs/AlGaAs photodetector with low dark current and high sensitivity

被引：6

作者：

Culp, J ^{[1
]}

Nabet, B ^{[1
]}

Castro, F ^{[1
]}

Anwar, A ^{[1
]}

机构：

[1] Drexel Univ, ECE Dept, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.122219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photodetector in which Schottky metal laterally contacts the molecular beam epitaxy grown heterointerface of intermediate-temperature GaAs and Al0.24Ga0.76As is reported. The device processed on 400 degrees C shows very low dark current, less than 25 fA/mu m(2) (0.5 pA/mu m), with a high de responsivity of about 10 A/W at low optical power levels. The device is process compatible with high electron mobility transistor technology. (C) 1998 American Institute of Physics.

引用

页码：1562 / 1564

页数：3

共 13 条

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