H-MESFET COMPATIBLE GAAS/ALGAAS MSM PHOTODETECTOR

被引:28
作者
BURROUGHES, JH [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1109/68.87946
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaAs/Al0.3Ga0.7 As short wavelength metal-semiconductor-metal photodetectors (MSM-PD), compatible with GaAs heterostructure MESFET technologies have been fabricated. Detector bandwidths greater than 3.5 GHz were observed for lambda = 800-850 nm. Due to the GaAs/AlGaAs heterojunction, low-frequency gain which is observed in GaAs MSM-PD's was minimized. The internal quantum efficiency was close to 100% and the dark currents were less than 1 nA for large-area detectors.
引用
收藏
页码:660 / 662
页数:3
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