H-MESFET COMPATIBLE GAAS/ALGAAS MSM PHOTODETECTOR

被引：28

作者：

BURROUGHES, JH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 07期

关键词：

D O I：

10.1109/68.87946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/Al0.3Ga0.7 As short wavelength metal-semiconductor-metal photodetectors (MSM-PD), compatible with GaAs heterostructure MESFET technologies have been fabricated. Detector bandwidths greater than 3.5 GHz were observed for lambda = 800-850 nm. Due to the GaAs/AlGaAs heterojunction, low-frequency gain which is observed in GaAs MSM-PD's was minimized. The internal quantum efficiency was close to 100% and the dark currents were less than 1 nA for large-area detectors.

引用

页码：660 / 662

页数：3

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