High quality YBa2Cu3O7 thin films grown by trifluoroacetates metalorganic deposition

Chemical solution growth of epitaxial YBa2Cu3O7 thin films on single crystalline substrates has been investigated using trifluoroacetate precursors. The concentration of the starting solution was selected to achieve a final film thickness of 250 nm. First, it is shown that high quality films can only be achieved if an homogeneous nanocrystalline film is obtained after the spin coating deposition and pyrolysis steps. Secondary phases such as BaCuO2, Y2BaCuO5 and CuO remain after the high temperature growth process, when macrosegregation is detected after these initial processing steps. A local degradation of texture associated with macrosegregation is detected by mu-Raman spectroscopy. The influence of growth temperature on the film quality has been analysed and the reaction times have been optimized at each temperature according to the reaction kinetics. In-situ fluoride analysis and mu-Raman spectroscopy have been used to determine the advancement of the fort-nation reaction. The most apparent microstructural modification of the;e thin film samples with optimized annealing times has been found to be an enhanced porosity for low processing temperatures. The influence of porosity on the normal state resistivity and the critical currents has been evidenced. Optimized processing parameters lead to samples with very high critical currents (j(c)(ab) = 3.2 x 10(6) A cm(-2) at 77 K and 2.7 x 10(7) A cm(-2) at 5 K) which demonstrates the capability of the trifluoroacetate metalorganic deposition method for thin film and coated conductor preparation.