Microscopic theory of spontaneous decay in a dielectric

被引：37

作者：

Fu, H ^{[1
]}

Berman, PR

机构：

[1] Univ Michigan, FOCUS Ctr, Michigan Ctr Theoret Phys, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

来源：

PHYSICAL REVIEW A | 2005年 / 72卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevA.72.022104

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The local field correction to the spontanous decay rate of an impurity source atom embedded in a disordered dielectric is calculated to second order in the dielectric density. The result is found to differ from predictions associated with both "virtual" and "real" cavity models of this decay process. However, if the contributions from two dielectric atoms at the same position are included, the virtual cavity result is reproduced.

引用

页数：6

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