Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO

被引：64

作者：

Ip, K ^{[1
]}

Heo, YW ^{[1
]}

Baik, KH ^{[1
]}

Norton, DP ^{[1
]}

Pearton, SJ ^{[1
]}

Ren, F ^{[1
]}

机构：

[1] Univ Florida, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.1644318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ti/Al/Pt/Au ohmic contacts on n-type ZnO with a range of carrier concentrations (7.5x10(15)-1.5x10(20) cm(-3)) show as-deposited specific contact resistances in the range from 3x10(-4) to 8x10(-7) Omega cm(2). Temperature-dependent measurements showed that the dominant transport mechanisms were tunneling in the contacts in the most highly doped films and thermionic emission in the more lightly doped films. After annealing at 200degreesC, the lowest specific contact resistance achieved was 2.2x10(-8) Omega cm(2). However, the contacts show evidence of reactions between the Ti and the ZnO film even for this low annealing temperature, suggesting that applications requiring good thermal stability will need metallurgy with better thermal stability. (C) 2004 American Institute of Physics.

引用

页码：544 / 546

页数：3

共 34 条

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[32] Piezoelectric contributions to the electrical behavior of ZnO varistors [J].