Structural phase transition of germanium under uniaxial stress:: An ab initio study -: art. no. 054112

被引:18
作者
Durandurdu, M [1 ]
机构
[1] Univ Texas, Dept Phys, El Paso, TX 79968 USA
来源
PHYSICAL REVIEW B | 2005年 / 71卷 / 05期
关键词
D O I
10.1103/PhysRevB.71.054112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An ab initio-constant pressure technique is applied to study the pressure-induced phase transition of germanium under uniaxial and hydrostatic stresses. The method successfully reproduces a first order phase transition from the diamond structure to a beta-Sn structure with the application of hydrostatic pressure. The simulations reveal that the uniaxially compressed germanium also undergoes similar phase transition via an intermediate state having a space group of I4(1)/amd. The transition pressure is significantly lowered for the uniaxial case, and the physical origin of which is associated with bond bending. The computed Poisson ratio of germanium agrees with experiments.
引用
收藏
页数:5
相关论文
共 17 条
[1]   A NEW DENSE FORM OF SOLID GERMANIUM [J].
BUNDY, FP ;
KASPER, JS .
SCIENCE, 1963, 139 (355) :340-&
[2]   1ST-PRINCIPLES STUDY OF THE STRUCTURAL-PROPERTIES OF GE [J].
CHANG, KJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1986, 34 (12) :8581-8590
[3]   Thermodynamics of uniaxial phase transition:: Ab initio study of the diamond-to-β-tin transition in Si and Ge -: art. no. 153202 [J].
Cheng, C ;
Huang, WH ;
Li, HJ .
PHYSICAL REVIEW B, 2001, 63 (15)
[4]   First-order pressure-induced polyamorphism in germanium [J].
Durandurdu, M ;
Drabold, DA .
PHYSICAL REVIEW B, 2002, 66 (04) :412011-412014
[5]   Simulation of pressure-induced polyamorphism in a chalcogenide glass GeSe2 -: art. no. 104208 [J].
Durandurdu, M ;
Drabold, DA .
PHYSICAL REVIEW B, 2002, 65 (10) :1042081-1042088
[6]   Ab initio simulation of first-order amorphous-to-amorphous phase transition of silicon -: art. no. 014101 [J].
Durandurdu, M ;
Drabold, DA .
PHYSICAL REVIEW B, 2001, 64 (01) :141011-141017
[7]  
HELLWAGE KH, 1982, NUMERICAL DATA FUN A, V17
[8]   CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF SILICON AND GERMANIUM [J].
JAMIESON, JC .
SCIENCE, 1963, 139 (355) :762-&
[9]   GERMANIUM AT HIGH-PRESSURES [J].
MENONI, CS ;
HU, JZ ;
SPAIN, IL .
PHYSICAL REVIEW B, 1986, 34 (01) :362-368
[10]   IDEAL CRYSTAL STABILITY AND PRESSURE-INDUCED PHASE-TRANSITION IN SILICON [J].
MIZUSHIMA, K ;
YIP, S ;
KAXIRAS, E .
PHYSICAL REVIEW B, 1994, 50 (20) :14952-14959