Dependence of impurity incorporation on the polar direction of GaN film growth

被引：160

作者：

Sumiya, M ^{[1
]}

Yoshimura, K ^{[1
]}

Ohtsuka, K ^{[1
]}

Fuke, S ^{[1
]}

机构：

[1] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 15期

关键词：

D O I：

10.1063/1.126267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the dependence of impurity incorporation on the polar direction of GaN growth by using secondary ion mass spectroscopy (SIMS). GaN films were deposited under conditions used for growing device-quality materials on sapphire substrates while controlling their polar direction. It was found that the polarity of the GaN film influences the incorporation of impurities. SIMS analysis has revealed that the impurities related to carbon, oxygen, and aluminum are more readily incorporated into N-face GaN films. (C) 2000 American Institute of Physics. [S0003-6951(00)04715-X].

引用

页码：2098 / 2100

页数：3

共 18 条

[1] Direct observation of localized high current densities in GaN films [J].

Brazel, EG ;

Chin, MA ;

Narayanamurti, V .

APPLIED PHYSICS LETTERS, 1999, 74 (16) :2367-2369

[2] Excitonic emissions from hexagonal GaN epitaxial layers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2784-2786

[3] Characterization of III nitride materials and devices by secondary ion mass spectrometry [J].

Chu, PK ;

Gao, YM ;

Erickson, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01) :197-203

[4] Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates [J].

Fuke, S ;

Teshigawara, H ;

Kuwahara, K ;

Takano, Y ;

Ito, T ;

Yanagihara, M ;

Ohtsuka, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :764-767

[5]

Hellman ES, 1996, MRS INTERNET J N S R, V1, pU117

[6]

IIU J, 1996, APPL PHYS LETT, V69, P3519

[7]

ITOH T, THESIS SHIZUOKA U

[8] Charge accumulation at a threading edge dislocation in gallium nitride [J].

Leung, K ;

Wright, AF ;

Stechel, EB .

APPLIED PHYSICS LETTERS, 1999, 74 (17) :2495-2497

[9] Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN [J].

Li, G ;

Chua, SJ ;

Xu, SJ ;

Wang, W ;

Li, P ;

Beaumont, B ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1999, 74 (19) :2821-2823

[10] Formation mechanism of nanotubes in GaN [J].

LilientalWeber, Z ;

Chen, Y ;

Ruvimov, S ;

Washburn, J .

PHYSICAL REVIEW LETTERS, 1997, 79 (15) :2835-2838

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