Biaxially aligned buffer layers of cerium oxide, yttria stabilized zirconia, and their bilayers

被引：29

作者：

Gnanarajan, S

Katsaros, A

Savvides, N

机构：

[1] CSIRO Telecom. and Indust. Physics, Lindfield

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

D O I：

10.1063/1.119017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Biaxially aligned cerium oxide (CeO2) and yttria stabilized zirconia (YSZ) films were deposited on Ni-based metal (Hastelloy C276) substrates held at room temperature using ion beam assisted (IBAD) magnetron deposition with the ion beam directed at 55 degrees to the normal of the film plane. Ln addition, we achieved, room-temperature epitaxial growth of CeO2 by bias sputtering to form biaxially aligned CeO2/YSZ bilayers. The crystalline structure and in-plane orientation of films was investigated by x-ray diffraction techniques. Both the IBAD CeO2 and YSZ films, and the CeO2/YSZ bilayers have a (111) pole in the ion beam direction. (C) 1997 American Institute of Physics.

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页码：2816 / 2818

页数：3

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