ION-BEAM-ASSISTED SPUTTER-DEPOSITION OF YSZ BUFFER LAYERS FOR SUPERCONDUCTING INTERCONNECT APPLICATIONS

被引：9

作者：

FLORENCE, G ^{[1
]}

ANG, S ^{[1
]}

BROWN, WD ^{[1
]}

机构：

[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1995年 / 8卷 / 07期

关键词：

D O I：

10.1088/0953-2048/8/7/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yttria-stabilized zirconia (YSZ) buffer layers have been sputter deposited onto various substrates including silicon and nickel alloy using ion-beam-assisted deposition (IBAD). This technique resulted in the formation of buffer layers which exhibit strong (100) phase growth as well as in-plane orientation as evidenced by x-ray diffraction measurements. Subsequent YBCO depositions on these films exhibit T-c values of 86 K and strong biaxial texture with the c axis normal to the surface. With further refinement, this technique may be used to fabricate the multilayer substrate structure needed for superconducting multichip modules.

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页码：546 / 551

页数：6

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