Estimation of ultra-shallow implants using SIMS NRA and chemical analysis

被引：14

作者：

Tomita, M

Suzuki, M

Tachibe, T

Kozuka, S

Murakoshi, A

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

[2] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[3] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 203卷

关键词：

SIMS; NRA; chemical analysis; ultra-shallow dopant; junction depth; implant dose;

D O I：

10.1016/S0169-4332(02)00679-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Estimation methods for ultra-shallow implants (boron and arsenic) were investigated. SIMS analysis enables accurate junction depth estimation for ultra-shallow junctions, when concentration and depth calibration methods using bulk-doped samples and multi-delta-structure samples are used together. Even with this advanced SIMS measurement, accurate implant doses cannot be estimated for ultra-shallow implants. NRA and chemical analyses have been developed for accurate measurements of boron and arsenic doses, respectively. Using three analytical methods (SIMS, NRA and chemical analysis), junction depths and implant doses can be estimated accurately and precisely. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：377 / 382

页数：6

共 8 条

[1]

BENNETT J, 2000, P SIMS, V12, P541

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