Low frequency noise in magnetic tunnel junctions

被引：15

作者：

Reed, DS ^{[1
]}

Nordman, C ^{[1
]}

Daughton, JM ^{[1
]}

机构：

[1] NVE Corp, Eden Prairie, MN 55344 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2001年 / 37卷 / 04期

关键词：

magnetoresistive devices; noise; tunneling;

D O I：

10.1109/20.951043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high magnetoresistance available in magnetic tunnel junctions makes them well suited to highly sensitive magnetic field sensors. However, the low-frequency sensitivity is limited by the presence of a relatively large 1/f noise. The dominant source of noise observed in these sensors is resistance fluctuations in the tunnel barrier rather than magnetic fluctuations found in giant magnetoresistance (GMR) devices. The noise level is highly variable even among nominally identical devices, but the noise does follow trends in relation to device magnetoresistance and device size. A filtering technique used to reduce the influence of this 1/f noise is demonstrated.

引用

页码：2028 / 2030

页数：3

共 5 条

[1] FLUCTUATION-DISSIPATION RELATION FOR GIANT MAGNETORESISTIVE 1/F NOISE [J].