Characterisation of uni-travelling-carder photodiode monolithically integrated with matching circuit

被引：7

作者：

Nagatsuma, T

Ishibashi, T

Hirata, A

Hirota, Y

Minotani, T

Sasaki, A

Ito, H

机构：

[1] Telecommun Energy Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Elect, Machida, Tokyo 1940004, Japan

[3] NTT, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 20期

关键词：

Bandwidth - Electric field effects - Electrooptical effects - Fourier transforms - Frequency domain analysis - Laser pulses - Millimeter waves - MIM devices - Natural frequencies - Photocurrents - Photodiodes - Time domain analysis - Waveform analysis - Waveguides;

D O I：

10.1049/el:20010858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 100 GHz high-output power uni-travelling-carrier photodiode with a monolithically integrated matching circuit is proposed and characterised by an electro-optic sampling technique. The device, exhibits resonant operation with a record output power of 13 mW at 100 GHz.

引用

页码：1246 / 1247

页数：2

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[8]

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