Interface formation between poly(9,9-dioctylfluorene) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid)

被引：10

作者：

Chang, Chih-Hao ^{[1
]}

Liao, Jin-Long ^{[1
]}

Hung, Ming-Chin ^{[1
]}

Chen, Show-An ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30043, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

关键词：

D O I：

10.1063/1.2456815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using ultraviolet photoelectron spectroscopy, the hole-injection barrier of poly-(9,9-dioctylfluorene) (PFO) cast on top of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) electrode is found to vary with thickness of both films, as confirmed by current profiles of hole-dominated and bipolar devices. The variation can be attributed to a migration of PSS chain as a dopant into PFO layer, as indicated by the broadening and shifting (towards higher binding energy) of highest occupied molecular orbital edge peak of PFO film. The barrier at the thinnest PEDOT:PSS film (15 nm) is found to be the smallest due to the least extent of doping by PSS chains. (c) 2007 American Institute of Physics.

引用

页数：3

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