Influence of Te inclusions and precipitates on the crystalline and thermal properties of CdTe single crystals

被引:25
作者
Rodriguez, ME
Zelaya-Angel, O
Bueno, JJP
Jimenez-Sandoval, S
Tirado, L
机构
[1] IPN, Ctr Invest Ciencia Aplicada & Tecnol Avanzada, Unidad Queretaro, Queretaro 76040, Qro, Mexico
[2] CINVESTAV, Dept Fis, Mexico City 07000, DF, Mexico
[3] CINVESTAV, Lab Invest Mat, Unidad Queretaro, Mexico City 14000, DF, Mexico
[4] Univ Quindio, Lab Optoelect, Armenia, Colombia
关键词
semiconductors; crystal growth; point defects; X-ray scattering; heat conduction;
D O I
10.1016/S0022-0248(00)00005-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
CdTe crystals grown by the Bridgman method were characterized by relating the Te excess to the bulk and their crystalline quality (CQ). The thermal diffusivity of these samples was measured using photoacoustic spectroscopy (PA). X-ray diffraction (XRD) data of the (1 1 1) peak of CdTe was employed to calculate the full-width at half-maximum (FWHM) and the lattice parameter. These results were used to compare CQ of different CdTe samples. The presence of Te inclusions and precipitates in the crystal was evident by XRD measurements and was confirmed using micro-Raman (mu R) spectroscopy. mu R microprobe scanning images were employed to determine the size, morphology, position and density of Te aggregates in the crystals. Photoluminescence (PL) measurements were carried out in order to assess the optical quality of the crystals and to relate these results to the XRD data. According to the experimental data, thermal diffusivity (alpha) is higher in samples with high crystalline quality and has strong dependence on the micro-structural composition of Te precipitates and inclusions. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:259 / 266
页数:8
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