HIGH-QUALITY, SINGLE-CRYSTAL CDTE GROWN BY A MODIFIED HORIZONTAL BRIDGMAN TECHNIQUE

被引：38

作者：

LAY, KY

NICHOLS, D

MCDEVITT, S

DEAN, BE

JOHNSON, CJ

机构：

[1] II-VI Inc, Saxonburg, PA, USA, II-VI Inc, Saxonburg, PA, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

CRYSTALS - Growing - INFRARED DETECTORS - Materials - X-RAY ANALYSIS;

D O I：

10.1016/0022-0248(90)90708-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High quality CdTe single crystals with low etch pit densities (EPDs) and subgrain-free structure have been produced by a multizone horizontal Bridgman technique. The volume of single crystal is up to 75% of the boule. Experimental results have demonstrated that growth stress plays a critical role in the reduction of dislocation densities. X-ray topography data confirm the improvement in crystalline perfection: EPD counts as low as 2 multiplied by 10**4/cm**2 are observed and double crystal X-ray rocking curves have FWHMs as low as 10 arc sec.

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页码：118 / 126

页数：9

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