Origin of the different reconstructions of diamond, Si, and Ge(111) surfaces -: art. no. 016103

被引:53
作者
Bechstedt, F [1 ]
Stekolnikov, AA [1 ]
Furthmüller, J [1 ]
Käckell, P [1 ]
机构
[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
关键词
D O I
10.1103/PhysRevLett.87.016103
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ab initio calculations of the 2 x 1, c(2 x 8), and 7 x 7 reconstructions of the diamond, Si, and Ge(111) surfaces are reported. The pi -bonded chain, adatom, and dimer-adatom-stacking fault models are studied to understand the driving forces for a certain reconstruction. The resulting energetics, geometries, and band structures are compared for the elemental semiconductors with different atomic sizes, and chemical trends are derived. We show why the lowest-energy reconstructions are different for the group-IV materials considered.
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页数:4
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