Ge/Si(100) islands: Growth dynamics versus growth rate

被引：34

作者：

Capellini, G

De Seta, M

Evangelisti, F

机构：

[1] Univ Roma Tre, Ist Nazl Fis Mat, I-00146 Rome, Italy

[2] Univ Roma Tre, Dipartimento Fis E Amaldi, I-00146 Rome, Italy

[3] CNR, Ist Foton & Nanotecnol, I-00156 Rome, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 01期

关键词：

D O I：

10.1063/1.1527211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the deposition rate on the size, density, and uniformity of Ge islands grown on Si(100) is investigated. Upon changing the growth rate from 4 to 110 ML/min the island density increases by one order of magnitude and the strained dome base decreases from 84 to 55 nm. A narrowing of the island size distribution was also observed. We discuss these experimental findings by taking into account island-island interaction effects. (C) 2003 American Institute of Physics.

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页码：291 / 295

页数：5

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