Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study

被引：25

作者：

Capellini, G

Motta, N

Sgarlata, A

Calarco, R

机构：

[1] Univ Roma TRE, Dipartimento Fis E Amaldi, I-00146 Rome, Italy

[2] Univ Roma TRE, Unita INFM, I-00146 Rome, Italy

[3] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy

[4] Univ Roma Tor Vergata, Unita INFM, I-00133 Rome, Italy

[5] CNR, Ist Elettron Stato Solido, I-00156 Rome, Italy

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 03期

关键词：

semiconductors; nanostructures; scanning tunnelling microscopy;

D O I：

10.1016/S0038-1098(99)00316-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have followed the evolution of strained Ge/Si(111) Stranski-Krastanov islands by atomic force and scanning tunneling microscopies. Following the morphological evolution during the annealing of the samples we were able to recognize the key features of the relaxation process in these structures. The introduction of edge misfit dislocations after a critical thickness, and the inhomogeneous strain field inside the islands, lead to an intra-island ripening mechanism. We show that this mechanism changes the island shape from truncated tetrahedron to "atoll-like". (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：145 / 149

页数：5

共 16 条

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