Numerical analysis of relationship between blocking and driving capability in 6H-SiC UMOSFET

被引：3

作者：

Hsing, EHS ^{[1
]}

Gray, JL ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 01期

关键词：

D O I：

10.1016/S0026-2692(97)00050-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Devices made of 6H-SiC have gained much attention owing to their superior characteristics. In this paper, we use an advanced device simulator, ADEPT, with the robust design of an experimental approach to analyze the trade-off between the blocking and driving capability in the designed 6H-SiC UMOSFET. New models based on the experimental data were created for the impact ionization and carrier mobility. Three device parameters, channel length, channel region doping and drift region doping, were selected to check their effects on the device's behavior. Based on our analysis, the channel length of the UMOSFET is the most significant factor among the chosen parameters in deciding the capability of the designed device. Special concern has to be directed to the device design to compromise the unavoidable performance trade-off. (C) 1998 Elsevier Science Ltd. AU rights reserved.

引用

页码：1 / 14

页数：14

共 42 条

[1]

[Anonymous], CMOS DEVICES TECHNOL

[2]

[Anonymous], 1987, SYSTEM EXPT DESIGN

[3] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[4]

BHATNAGAR M, 1991, PROCEEDINGS OF THE 3RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, P176, DOI 10.1109/ISPSD.1991.146093

[5]

BHATNAGAR M, 1993, 5 SIC REL MAT C, P703

[6]

BYRNE D, 1986, ASQC T ANN QUAL C AN

[7]

CAUGHEY DM, 1967, P IEEE, V55, P2193

[8]

CHARLEYPOULAIN J, 1993, VET RES, V24, P99

[9] SIC BIPOLAR-DEVICES [J].

CHELNOKOV, VE .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4) :103-111

[10] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J].

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW, 1962, 127 (06) :1868-&

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