Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

被引：173

作者：

Rutter, G. M. ^{[1
]}

Guisinger, N. P. ^{[2
]}

Crain, J. N. ^{[2
]}

Jarvis, E. A. A. ^{[2
]}

Stiles, M. D. ^{[2
]}

Li, T. ^{[1
]}

First, P. N. ^{[1
]}

Stroscio, J. A. ^{[2
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.76.235416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at energies of +/- 1 eV above or below the Fermi energy (E(F)). Our analysis of calculations based on density-functional theory shows how this transparency arises from the electronic structure of a graphene layer on a SiC substrate.

引用

页数：6

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