Advanced dielectrics for gate oxide, DRAM and rf capacitors

被引：35

作者：

van Dover, RB ^{[1
]}

Fleming, RM ^{[1
]}

Schneemeyer, LF ^{[1
]}

Alers, GB ^{[1
]}

Werder, DJ ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high us 62 and leakage currents of less than 10(-8) A/cm(2) at 1MV/cm.

引用

页码：823 / 826

页数：4