Hydrogen diffusion on Si(001)

被引：85

作者：

Owen, JHG ^{[1
]}

Bowler, DR ^{[1
]}

Goringe, CM ^{[1
]}

Miki, K ^{[1
]}

Briggs, GAD ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.54.14153

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have imaged hydrogen on Si(001) at low coverages in a variable-temperature STM from 300 K up to 700 K. Individual hydrogen atoms were imaged which became mobile at around 570 K. The observed rate of hopping along the dimer rows was consistent with an activation energy of 1.68 +/- 0.15 eV. Motion across dimer rows was rarely observed, even at the higher temperatures. The diffusion barrier for motion along the dimer rows has been calculated using tight-binding and density-functional theory in the generalized gradient approximation (GGA). The calculated barrier is 1.65 eV from tight binding and 1.51 eV from GGA.

引用

页码：14153 / 14157

页数：5

共 25 条

[1] ROLE OF HYDROGEN DESORPTION IN THE CHEMICAL-VAPOR DEPOSITION OF SI(100) EPITAXIAL-FILMS USING DISILANE [J].