Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs

被引：41

作者：

Loka, HS ^{[1
]}

Smith, PWE ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

asymmetric Fabry-Perot devices; low-temperature-grown GaAs; nonlinear optics; optical switches;

D O I：

10.1109/68.730485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first ultrafast all-optical snitching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device, We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/mu m(2) average switching energy flux.

引用

页码：1733 / 1735

页数：3

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