Corrosive behavior of tungsten in post dry-etch residue remover

被引:10
作者
Chen, BH
Zhang, H
Chooi, SYM
Chan, L
Xu, Y
Ye, JH
机构
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
[2] Natl Univ Singapore, Dept Chem & Environm Engn, Singapore 119260, Singapore
[3] Chartered Semicond Mfg Ltd, Dept Technol Dev, Singapore 738406, Singapore
[4] Inst Mat Res & Engn, Singapore 117602, Singapore
关键词
D O I
10.1021/ie030025h
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Failure of the tungsten (W) plug has become the main reliability issue in post-metal-etch cleaning due to the interaction between tungsten and the alkanolamine or hydroxylamine ingredients in the cleaning solution, as well as tungsten and chloride from the previous chlorine-based etching process. In our efforts to understand tungsten plug corrosion, the electrochemical behavior of blanket tungsten films in the post-etch resist remover, the EKC265 solution, at 65 degreesC in the presence of deionized water and Cl- was investigated using Tafel extrapolation, potentiometry, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The corrosion-current density and the open-circuit potential data showed that the basic EKC265 solution was aggressive to tungsten. The addition of chloride ions (Cl-) and the deionized water to the EKC265 solution further increased the corrosion-current density and shifted the open-circuit potential to more negative values. SEM pictures gave visual evidence of changes on the tungsten surface due to corrosion. Pitting was observed in the presence of both deionized water and Cl-. The changes in the chemical composition of tungsten films were evaluated with XPS. It was found that the distribution of oxidation states of tungsten was largely influenced by the chemical treatment in the EKC265-based electrolytes and closely related to the corrosion resistance of tungsten in the electrolytes.
引用
收藏
页码:6096 / 6103
页数:8
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