Non-stoichiometry and electronic properties of interfaces

被引：58

作者：

Klein, A. ^{[1
]}

Saeuberlich, F. ^{[1
]}

Spaeth, B. ^{[1
]}

Schulmeyer, T. ^{[1
]}

Kraft, D. ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Fachgebiet Oberfalchenforsch, Inst Mat Wissensch, D-64287 Darmstadt, Germany

来源：

JOURNAL OF MATERIALS SCIENCE | 2007年 / 42卷 / 06期

关键词：

D O I：

10.1007/s10853-006-1322-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper gives an overview on the influence of point defects on electronic properties of interfaces including band alignment (barrier heights) and transport properties. As examples interfaces between metals and the II-VI semiconductors CdTe and ZnTe are presented. In addition untypical phenomena at semiconductor heterocontact formation at In2S3/ZnO and CuInSe2/CdS interfaces is described. It is suggested that the barrier heights as well as the transport properties at both interfaces are strongly affected by defects, which are either present because of non-stoichiometry of the materials or introduced by contact formation due to chemical interactions.

引用

页码：1890 / 1900

页数：11

共 67 条

[1] [Anonymous], ELECT PROPERTIES SEM
[2] Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors
Baniecki, JD
Laibowitz, RB
Shaw, TM
Saenger, KL
Duncombe, PR
Cabral, C
Kotecki, DE
Shen, H
Lian, J
Ma, QY
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) : 1457 - 1461
[3] Briggs D., 1983, Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy
[4] Capasso F., 1987, Heterojunction Band Discontinuities: Physics and Device Applications
[5] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS
CARDONA, M
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6182 - 6194
[6] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[7] Recent developments and progress on electrical contacts to CdTe, CdS and ZnSe with special reference to barrier contacts to CdTe
Dharmadasa, IM
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1998, 36 (04): : 249 - 290
[8] Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties
Ellmer, K
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (04) : R17 - R32
[9] First-principles study of the structure and stability of oxygen defects in zinc oxide
Erhart, P
Klein, A
Albe, K
[J]. PHYSICAL REVIEW B, 2005, 72 (08)
[10] Fonash Stephen., 1981, Solar cell device physics

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