Origin of ferromagnetism and nano-scale phase separations in diluted magnetic semiconductors

被引:18
作者
Dietl, Tomasz
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Japan Sci & Technol Agcy, ERATO, Semicond Spintron Project, PL-02668 Warsaw, Poland
[3] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland
关键词
diluted magnetic semiconductors; ferromagnetic semiconductors; magnetic nanocrystals;
D O I
10.1016/j.physe.2006.08.027
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper reviews various origins of ferromagnetic response that has been detected in diluted magnetic semiconductors (DMS). Particular attention is paid to those ferromagnetic DMS in which no precipitation of other crystallographic phases has been observed. It is argued that these materials can be divided into three categories. The first consists of (Ga,Mn)As and related compounds. In these solid solutions the theory built on p-d Zener's model of hole-mediated ferromagnetism and the Kohn-Luttinger kp theory of semiconductors describes quantitatively thermodynamic, micromagnetic, optical, and transport properties. Moreover, the understanding of these materials has provided a basis for the development of novel methods enabling magnetisation manipulation and switching. To the second group belong compounds, in which a competition between long-range ferromagnetic and short-range anti ferromagnetic interactions and/ or the proximity of the localisation boundary lead to an electronic nano-scale phase separation that results in characteristics similar to colossal magnetoresistance oxides. Finally, in a number of compounds a chemical nano-scale phase separation into the regions with small and large concentrations of the magnetic constituent is present. It has recently been suggested that this spinodal decomposition can be controlled by the charge state of relevant magnetic impurities. This constitutes a new perspective method for 3D self-organised growth of coherent magnetic nanocrystals embedded by the semiconductor matrix. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:293 / 299
页数:7
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