An improvement of surface smoothness and lattice match of CeO2 buffer layers on R-sapphire processed by MOCVD

被引：30

作者：

Graboy, IE

Markov, NV

Maleev, VV

Kaul, AR

Polyakov, SN

Svetchnikov, VL

Zandbergen, HW

Dahmen, KH

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV, DEPT CHEM, MOSCOW 119899, RUSSIA

[2] MOSCOW MV LOMONOSOV STATE UNIV, DEPT PHYS, MOSCOW 119899, RUSSIA

[3] DELFT UNIV TECHNOL, NATL CTR HREM, NL-2628 AL DELFT, NETHERLANDS

[4] FLORIDA STATE UNIV, DEPT CHEM, TALLAHASSEE, FL 32306 USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1997年 / 251卷 / 1-2期

关键词：

MOCVD; post deposition annealing; deposition rate decrease;

D O I：

10.1016/S0925-8388(96)02700-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial thin films of CeO2 and Ce1-xRxO2-y (R=Y, Nd; x=0-0.32) on R-sapphire were prepared by band flash evaporation MOCVD. It was demonstrated that the smoothness of the films can be improved by a decrease of deposition rate and by post deposition annealing at 1000 degrees C. The lattice match of buffer layers with R-Al2O3 and YBa2Cu3O7-delta was improved by doping of ceria with yttrium and neodymium correspondingly, A bilayer structure Ce0.7Nd0.3O2-y/Ce0.68Y0.32O2-y/R-Al2O3 is proposed as potential substrate material for YBa2Cu3O7-delta deposition.

引用

页码：318 / 321

页数：4