Highly c-axis oriented Pb(Zr,Ti)O3 thin films grown on Ir electrode barrier and their electrical properties

被引:58
作者
Lee, KB [1 ]
Tirumala, S
Desu, SB
机构
[1] Virginia Tech, Thin Film Lab, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA
[2] Sangji Univ, Dept Phys, Wonju 220702, Kangwondo, South Korea
关键词
D O I
10.1063/1.123588
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O-3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 degrees C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at P-O2 = 1 mTorr was 20 mu C/cm(2) and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 10(11) switching repetitions. The leakage current density at a field of 80 kV was 5 X 10(-8) A/ cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)01510-7].
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页码:1484 / 1486
页数:3
相关论文
共 8 条
[1]  
[Anonymous], UNPUB
[2]   TEMPERATURE-TIME TEXTURE TRANSITION OF PB(ZR1-XTIX)O-3 THIN-FILMS .1. ROLE OF PB-RICH INTERMEDIATE PHASES [J].
CHEN, SY ;
CHEN, IW .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (09) :2332-2336
[3]   ELECTRICAL-PROPERTIES OF PB(ZR,TI)O-3 THIN-FILM CAPACITORS ON PT AND IR ELECTRODES [J].
NAKAMURA, T ;
NAKAO, Y ;
KAMISAWA, A ;
TAKASU, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5184-5187
[4]   PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON ELECTRODES INCLUDING IRO2 [J].
NAKAMURA, T ;
NAKAO, Y ;
KAMISAWA, A ;
TAKASU, H .
APPLIED PHYSICS LETTERS, 1994, 65 (12) :1522-1524
[5]   FATIGUE AND RETENTION IN FERROELECTRIC Y-BA-CU-O/PB-ZR-TI-O/Y-BA-CU-O HETEROSTRUCTURES [J].
RAMESH, R ;
CHAN, WK ;
WILKENS, B ;
GILCHRIST, H ;
SANDS, T ;
TARASCON, JM ;
KERAMIDAS, VG ;
FORK, DK ;
LEE, J ;
SAFARI, A .
APPLIED PHYSICS LETTERS, 1992, 61 (13) :1537-1539
[6]  
SHIMIZU M, 1997, FERROELECTRIC THIN 4, V493, P159
[7]  
Shimono T, 1996, IN VIVO, V10, P471
[8]   Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1-xTix)O3 thin films [J].
Song, YJ ;
Zhu, YF ;
Desu, SB .
APPLIED PHYSICS LETTERS, 1998, 72 (21) :2686-2688