Photoresponse of microwave transistors to high-frequency modulated lightwave carrier signal

被引：20

作者：

deBarros, LEM ^{[1
]}

Paolella, A ^{[1
]}

Frankel, MY ^{[1
]}

Romero, MA ^{[1
]}

Herczfeld, PR ^{[1
]}

Madjar, A ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1997年 / 45卷 / 08期

关键词：

heterojunction bipolar transistors; microwave transistors; optoelectronic devices; photodetectors; phototransistors; transient analysis;

D O I：

10.1109/22.618438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Described in this paper are the photoresponse characteristics of microwave transistors, both unipolar [metal-semiconductor FET's (MESFET's) and modulation-doped FET's (MODFET's)] and bipolar [heterojunction bipolar transistors (HBT's)], Investigation includes time-and frequency-domain measurements, For unipolar devices FET's, the two dominant photodetection mechanisms, photoconductive and photovoltaic, are clearly identified within the same device for the first time, It is shown that even high-speed FET's are limited to a photonic bandwidth or a few megahertz, if photodetection and amplification are to be achieved simultaneously. In contrast, bipolars HET's can provide optical gain up to the millimeter-wave range, It is shown that their bandwidth to a modulated optical input is closely related to the microwave bandwidth, and that parameters such as base-access resistance and base-emitter capacitance are critical to photoresponse optimization.

引用

页码：1368 / 1374

页数：7

共 25 条

[1] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J].