BIAS-FREE SELECTIVELY DOPED ALXGA1-XAS-GAAS PICOSECOND PHOTODETECTORS

[1] AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 66 - 68

[2] INGAASP-INGAAS HETEROJUNCTION P-I-N DETECTORS WITH LOW DARK CURRENT AND SMALL CAPACITANCE FOR 1.3-1.6-MU-M FIBER OPTIC SYSTEMS [J]. ELECTRONICS LETTERS, 1980, 16 (23) : 893 - 895

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 549 - 558

[5] LEE TP, 1979, IEEE J QUANTUM ELECT, V15, P30

[6] LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507

[7] DETECTORS FOR LIGHTWAVE COMMUNICATION [J]. PHYSICS TODAY, 1977, 30 (11) : 32 - 39

[8] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5986 - 5991

[1] AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 66 - 68

[2] INGAASP-INGAAS HETEROJUNCTION P-I-N DETECTORS WITH LOW DARK CURRENT AND SMALL CAPACITANCE FOR 1.3-1.6-MU-M FIBER OPTIC SYSTEMS [J]. ELECTRONICS LETTERS, 1980, 16 (23) : 893 - 895

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 549 - 558

[5] LEE TP, 1979, IEEE J QUANTUM ELECT, V15, P30

[6] LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507

[7] DETECTORS FOR LIGHTWAVE COMMUNICATION [J]. PHYSICS TODAY, 1977, 30 (11) : 32 - 39

[8] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5986 - 5991