High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target

被引：99

作者：

Alami, J.

Eklund, P. ^{[1
]}

Emmerlich, J.

Wilhelmsson, O.

Jansson, U.

Hogberg, H.

Hultman, L.

Helmersson, U.

机构：

[1] Linkoping Univ, Thin Film Phys Div, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Linkoping Univ, Plasma & Coatings Phys Div, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[3] Uppsala Univ, Dept Chem Mat, Angstrom Lab, SE-75121 Uppsala, Sweden

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 04期

关键词：

HIPIMS; titanium silicon carbide; PHYSICAL VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; MECHANICAL-PROPERTIES; DISCHARGE; PLASMA; COATINGS;

D O I：

10.1016/j.tsf.2006.06.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with direct-current magnetron sputtering under comparable conditions were rough and porous. We show that, due to the high degree of ionization of the sputtered species obtained in HIPIMS, the film composition, in particular the C content, depends on substrate inclination angle and Ar process pressure. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1731 / 1736

页数：6

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