Absolute densities of N and excited N2 in a N2 plasma

被引:69
作者
Agarwal, S
Hoex, B
van de Sanden, MCM
Maroudas, D
Aydil, ES [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[3] Univ Massachusetts, Dept Chem Engn, Amherst, MA 01003 USA
关键词
D O I
10.1063/1.1630843
中图分类号
O59 [应用物理学];
学科分类号
摘要
Atomic N and excited N-2 (N-2(*)) play important roles in plasma-assisted synthesis of nitride materials, such as GaN. Absolute densities of N and N-2(*) were measured at the substrate plane in an inductively coupled N-2 plasma in the pressure range of 10 to 200 mTorr using modulated-beam line-of-sight threshold ionization mass spectrometry. The density of N increased with increasing pressure from 2.9x10(18) to 1.8x10(19) m(-3), while the density of N-2(*) was in the range of 9.7x10(17) to 2.4x10(18) m(-3), with a maximum at 50 mTorr. Based on the appearance potential of N-2(*) at similar to12 eV, we identify this excited molecule as long-lived N-2 (A(3)Sigma(u)(+)) metastable. (C) 2003 American Institute of Physics.
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页码:4918 / 4920
页数:3
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