Enhanced radiation hardness of ZnO nanorods versus bulk layers

被引：21

作者：

Burlacu, A. ^{[1
]}

Ursaki, V. V. ^{[1
,2
]}

Lincot, D. ^{[3
]}

Skuratov, V. A. ^{[4
]}

Pauporte, T. ^{[3
]}

Rusu, E. ^{[1
,2
]}

Tiginyanu, I. M. ^{[1
,2
]}

机构：

[1] Moldavian Acad Sci, Inst Appl Sci, Lab Low Dimens Semicond Struct, Kishinev 2028, Moldova

[2] Tech Univ Moldova, Natl Ctr Mat Study & Testing, Kishinev 2004, Moldova

[3] CNRS, ENSCP, UMR 7575, Lab Electrochim & Chim Analyt, F-75231 Paris, France

[4] Joint Inst Nucl Res, Flerov Lab Nucl React, Dubna 141980, Russia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 02期

关键词：

D O I：

10.1002/pssr.200701318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

\ It is shown that ZnO nanorods grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe+23 irradiation at a dose of 1.5 x 10(14) cm(-2) in ZnO nanorods is nearly identical to that induced by a dose of 6 x 10(12) cm(-2) in bulk layers. The change in the nature of electronic transitions responsible for luminescence occurs at an irradiation dose around 1 X 10(14) cm(-2) and 5 X 10(12) cm(-2) in nanorods and bulk layers, respectively. High energy heavy ion irradiation followed by thermal annealing is also effective on the quality of ZnO nanorods grown by electrodeposition. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：68 / 70

页数：3

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