Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma

被引：9

作者：

Moniruzzaman, S ^{[1
]}

Inokuma, T ^{[1
]}

Kurata, Y ^{[1
]}

Takenaka, S ^{[1
]}

Hasegawa, S ^{[1
]}

机构：

[1] Kanazawa Univ, Fac Technol, Dept Elect, Kanazawa, Ishikawa 920, Japan

来源：

THIN SOLID FILMS | 1999年 / 337卷 / 1-2期

关键词：

poly-Si; surface treatment; structural properties; plasma enhanced chemical vapor deposition; nucleation density;

D O I：

10.1016/S0040-6090(98)01170-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline silicon (poly-Si) films were deposited on glass substrates (corning 7059) at 300 degrees C by a plasma enhanced chemical vapor deposition (PECVD) from a SIH4/SiF4 mixture. All poly-Si films were prepared under the same deposition conditions on the substrates subjected to nitrogen, hydrogen and/or CF4 plasma with different gas pressures, just before deposition of the poly-Si films. Effects of such pretreatments for substrates on the structural properties of the resultant poly-Si films have been investigated. The Si film deposited on the substrates without any pretreatments was amorphous. However, formation of a strong [110] preferentially oriented poly-Si with improved crystallinity was obtained for the films deposited on the glass substrate after plasma pretreatments, which exhibit smoother surfaces. This result was interpreted in terms of a removal of weak Si-Si bonds during nucleation and the subsequent grain growth. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：27 / 31

页数：5

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