HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS

被引：94

作者：

HATALIS, MK

GREVE, DW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 08期

关键词：

D O I：

10.1109/EDL.1987.26660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：361 / 364

页数：4

相关论文

共 13 条

[1] INTERPRETATION OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
GREVE, DW
HAY, VR
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1176 - 1180
[2] GROWTH AND PHYSICAL-PROPERTIES OF LPCVD POLYCRYSTALLINE SILICON FILMS
HARBEKE, G
KRAUSBAUER, L
STEIGMEIER, EF
WIDMER, AE
KAPPERT, HF
NEUGEBAUER, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : 675 - 682
[3] HATALIS MK, UNPUB J APPL PHYS
[4] POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS
HAWKINS, WG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) : 477 - 481
[5] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON
MALHI, SDS
SHICHIJO, H
BANERJEE, SK
SUNDARESAN, R
ELAHY, M
POLLACK, GP
RICHARDSON, WF
SHAH, AH
HITE, LR
WOMACK, RH
CHATTERJEE, PK
LAM, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281
[6] LOW-TEMPERATURE POLYSILICON SUPER-THIN-FILM TRANSISTOR (LSFT)
NOGUCHI, T
HAYASHI, H
OHSHIMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L121 - L123
[7] FABRICATION OF HIGH-VOLTAGE POLYSILICON TFTS ON AN INSULATOR
PENNELL, R
CATERO, R
LOVELIS, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : 2358 - 2361
[8] THE FEASIBILITY OF SILICON ON GARNET TECHNOLOGY
RASKY, PHL
GREVE, DW
KRYDER, MH
DUTTA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 4077 - 4079
[9] EFFECTS OF H+ IMPLANT DOSE AND FILM DEPOSITION CONDITIONS ON POLYCRYSTALLINE-SI MOSFET CHARACTERISTICS
RODDER, M
ANTONIADIS, DA
SCHOLZ, F
KALNITSKY, A
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 27 - 29
[10] COMPARISON OF DIFFERENT TECHNIQUES FOR PASSIVATION OF SMALL-GRAIN POLYCRYSTALLINE-SI MOSFETS
RODDER, M
ANTONIADIS, DA
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) : 570 - 572