FABRICATION OF HIGH-VOLTAGE POLYSILICON TFTS ON AN INSULATOR

[1] ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 604 - 606

[2] INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1408 - 1410

[3] FRANKLIN H, 1985, 1985 IEEE INT DISPL

[4] HAERTLING GH, 1983, FERROELECTRICS, V50, P389

[5] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 686 - 690

[6] HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (08): : 159 - 161

[7] INFLUENCE OF PLASMA ANNEALING ON ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SI [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 551 - 552

[8] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 178 - 201

[9] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 468 - 470

[10] POWELL MJ, 1984, P SID, V25, P269

[1] ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 604 - 606

[2] INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1408 - 1410

[3] FRANKLIN H, 1985, 1985 IEEE INT DISPL

[4] HAERTLING GH, 1983, FERROELECTRICS, V50, P389

[5] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 686 - 690

[6] HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (08): : 159 - 161

[7] INFLUENCE OF PLASMA ANNEALING ON ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SI [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 551 - 552

[8] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 178 - 201

[9] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 468 - 470

[10] POWELL MJ, 1984, P SID, V25, P269