INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON

被引：18

作者：

CHEN, DL ^{[1
]}

GREVE, DW ^{[1
]}

GUZMAN, AM ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.334499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1408 / 1410

页数：3

共 22 条

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