THEORY OF CONDUCTION IN POLYSILICON - DRIFT-DIFFUSION APPROACH IN CRYSTALLINE-AMORPHOUS-CRYSTALLINE SEMICONDUCTOR SYSTEM .1. SMALL-SIGNAL THEORY

被引：71

作者：

KIM, DM ^{[1
]}

KHONDKER, AN ^{[1
]}

AHMED, SS ^{[1
]}

SHAH, RR ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, SEMICOND RES & DEV LAB, TECH STAFF, DALLAS, TX 75265 USA

来源：

关键词：

D O I：

10.1109/T-ED.1984.21554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：480 / 493

页数：14

共 52 条

[1] APPLETON BR, 1982, LASER ELECTRON BEAM
[2] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
BACCARANI, G
RICCO, B
SPADINI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[3] BRODSKY MH, 1979, AMORPHOUS SEMICONDUC
[4] ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS
CAMPBELL, DR
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 604 - 606
[5] GRAIN-SIZE AND RESISTIVITY OF LPCVD POLYCRYSTALLINE SILICON FILMS
COLINGE, JP
DEMOULIN, E
DELANNAY, F
LOBET, M
TEMERSON, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 2009 - 2014
[6] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.
Cowher, M.E.
Sedgwick, T.O.
[J]. 1600, (119):
[7] Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703
[8] DIODE CHARACTERISTICS IN LASER-RECRYSTALLIZED AND CONVENTIONAL POLYCRYSTALLINE SILICON
EGGERMONT, GEJ
DEGROOT, JG
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 156 - 158
[9] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
HIROSE, M
TANIGUCHI, M
OSAKA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382
[10] HO PS, 1982, THIN FILMS INTERFACE