学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS
被引:91
作者
:
HAWKINS, WG
论文数:
0
引用数:
0
h-index:
0
HAWKINS, WG
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1986年
/ 33卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1986.22515
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:477 / 481
页数:5
相关论文
共 17 条
[1]
ELECTRICAL-CONDUCTION IN IMPLANTED POLYCRYSTALLINE SILICON
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill, 07974, New Jersey
ANDREWS, JM
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(03)
: 227
-
247
[2]
DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
MOSKOWITZ, I
论文数:
0
引用数:
0
h-index:
0
MOSKOWITZ, I
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: 6788
-
6796
[3]
OXIDATION-INDUCED POINT-DEFECTS IN SILICON
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(05)
: 1093
-
1097
[4]
LATERAL DIFFUSION OF BORON IN POLYCRYSTALLINE SILICON AND ITS INFLUENCE ON FABRICATION OF SUB-MICRON MOSTS
COE, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
COE, DJ
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(12)
: 985
-
992
[5]
SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON
FAHEY, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
FAHEY, P
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
DUTTON, RW
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
HU, SM
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(08)
: 777
-
779
[6]
HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
HARBEKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
HARBEKE, G
KRAUSBAUER, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KRAUSBAUER, L
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
STEIGMEIER, EF
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
WIDMER, AE
KAPPERT, HF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KAPPERT, HF
NEUGEBAUER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
NEUGEBAUER, G
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(03)
: 249
-
251
[7]
HAWKINS WG, 1985, MATER RES SOC S P, V49, P443
[8]
DENSITY OF GAP STATES OF SILICON GRAIN-BOUNDARIES DETERMINED BY OPTICAL-ABSORPTION
JACKSON, WB
论文数:
0
引用数:
0
h-index:
0
JACKSON, WB
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
BIEGELSEN, DK
论文数:
0
引用数:
0
h-index:
0
BIEGELSEN, DK
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(02)
: 195
-
197
[9]
Kaneko S., 1984, MAT RES S P, V33, P275
[10]
INFLUENCE OF AS-DEPOSITED FILM STRUCTURE ON (100) TEXTURE IN LASER-RECRYSTALLIZED SILICON ON FUSED QUARTZ
KIMURA, M
论文数:
0
引用数:
0
h-index:
0
KIMURA, M
EGAMI, K
论文数:
0
引用数:
0
h-index:
0
EGAMI, K
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(04)
: 420
-
422
←
1
2
→
共 17 条
[1]
ELECTRICAL-CONDUCTION IN IMPLANTED POLYCRYSTALLINE SILICON
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill, 07974, New Jersey
ANDREWS, JM
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(03)
: 227
-
247
[2]
DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
MOSKOWITZ, I
论文数:
0
引用数:
0
h-index:
0
MOSKOWITZ, I
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: 6788
-
6796
[3]
OXIDATION-INDUCED POINT-DEFECTS IN SILICON
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(05)
: 1093
-
1097
[4]
LATERAL DIFFUSION OF BORON IN POLYCRYSTALLINE SILICON AND ITS INFLUENCE ON FABRICATION OF SUB-MICRON MOSTS
COE, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
COE, DJ
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(12)
: 985
-
992
[5]
SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON
FAHEY, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
FAHEY, P
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
DUTTON, RW
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,DIV GEN TECHNOL,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
HU, SM
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(08)
: 777
-
779
[6]
HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
HARBEKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
HARBEKE, G
KRAUSBAUER, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KRAUSBAUER, L
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
STEIGMEIER, EF
WIDMER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
WIDMER, AE
KAPPERT, HF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
KAPPERT, HF
NEUGEBAUER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
NEUGEBAUER, G
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(03)
: 249
-
251
[7]
HAWKINS WG, 1985, MATER RES SOC S P, V49, P443
[8]
DENSITY OF GAP STATES OF SILICON GRAIN-BOUNDARIES DETERMINED BY OPTICAL-ABSORPTION
JACKSON, WB
论文数:
0
引用数:
0
h-index:
0
JACKSON, WB
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
BIEGELSEN, DK
论文数:
0
引用数:
0
h-index:
0
BIEGELSEN, DK
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(02)
: 195
-
197
[9]
Kaneko S., 1984, MAT RES S P, V33, P275
[10]
INFLUENCE OF AS-DEPOSITED FILM STRUCTURE ON (100) TEXTURE IN LASER-RECRYSTALLIZED SILICON ON FUSED QUARTZ
KIMURA, M
论文数:
0
引用数:
0
h-index:
0
KIMURA, M
EGAMI, K
论文数:
0
引用数:
0
h-index:
0
EGAMI, K
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(04)
: 420
-
422
←
1
2
→