POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS

[1] ELECTRICAL-CONDUCTION IN IMPLANTED POLYCRYSTALLINE SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 227 - 247

[2] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6788 - 6796

[3] OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1093 - 1097

[4] LATERAL DIFFUSION OF BORON IN POLYCRYSTALLINE SILICON AND ITS INFLUENCE ON FABRICATION OF SUB-MICRON MOSTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (12) : 985 - 992

[5] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 777 - 779

[6] HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 249 - 251

[7] HAWKINS WG, 1985, MATER RES SOC S P, V49, P443

[8] DENSITY OF GAP STATES OF SILICON GRAIN-BOUNDARIES DETERMINED BY OPTICAL-ABSORPTION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 195 - 197

[9] Kaneko S., 1984, MAT RES S P, V33, P275

[10] INFLUENCE OF AS-DEPOSITED FILM STRUCTURE ON (100) TEXTURE IN LASER-RECRYSTALLIZED SILICON ON FUSED QUARTZ [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 420 - 422

[1] ELECTRICAL-CONDUCTION IN IMPLANTED POLYCRYSTALLINE SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 227 - 247

[2] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6788 - 6796

[3] OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1093 - 1097

[4] LATERAL DIFFUSION OF BORON IN POLYCRYSTALLINE SILICON AND ITS INFLUENCE ON FABRICATION OF SUB-MICRON MOSTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (12) : 985 - 992

[5] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 777 - 779

[6] HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 249 - 251

[7] HAWKINS WG, 1985, MATER RES SOC S P, V49, P443

[8] DENSITY OF GAP STATES OF SILICON GRAIN-BOUNDARIES DETERMINED BY OPTICAL-ABSORPTION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 195 - 197

[9] Kaneko S., 1984, MAT RES S P, V33, P275

[10] INFLUENCE OF AS-DEPOSITED FILM STRUCTURE ON (100) TEXTURE IN LASER-RECRYSTALLIZED SILICON ON FUSED QUARTZ [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 420 - 422