INTERPRETATION OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

[1] MODELING OF ACCUMULATION-MODE MOSFETS IN POLYSILICON THIN-FILMS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 313 - 315

[2] THEORY OF THIN-FILM TRANSISTOR [J]. THIN SOLID FILMS, 1976, 38 (02) : 151 - 161

[3] A NEW AC TECHNIQUE FOR ACCURATE DETERMINATION OF CHANNEL CHARGE AND MOBILITY IN VERY THIN GATE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1299 - 1304

[4] Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703

[5] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[6] TRAPS AT THE AL2O3/CDSE INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5294 - 5303

[7] PROGRAMMING MECHANISM OF POLYSILICON RESISTOR FUSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 719 - 724

[8] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 789 - &

[9] CHANNEL ELECTRON CONDUCTION IN LASER-ANNEALED POLYCRYSTALLINE SILICON METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 770 - 772

[10] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281

[1] MODELING OF ACCUMULATION-MODE MOSFETS IN POLYSILICON THIN-FILMS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 313 - 315

[2] THEORY OF THIN-FILM TRANSISTOR [J]. THIN SOLID FILMS, 1976, 38 (02) : 151 - 161

[3] A NEW AC TECHNIQUE FOR ACCURATE DETERMINATION OF CHANNEL CHARGE AND MOBILITY IN VERY THIN GATE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1299 - 1304

[4] Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703

[5] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[6] TRAPS AT THE AL2O3/CDSE INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5294 - 5303

[7] PROGRAMMING MECHANISM OF POLYSILICON RESISTOR FUSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 719 - 724

[8] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 789 - &

[9] CHANNEL ELECTRON CONDUCTION IN LASER-ANNEALED POLYCRYSTALLINE SILICON METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 770 - 772

[10] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281