CHANNEL ELECTRON CONDUCTION IN LASER-ANNEALED POLYCRYSTALLINE SILICON METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：10

作者：

LEE, HS

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 10期

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D O I：

10.1063/1.92157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：770 / 772

页数：3

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