PROGRAMMING MECHANISM OF POLYSILICON RESISTOR FUSES

被引：27

作者：

GREVE, DW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：719 / 724

页数：6

共 17 条

[1] SCANNING ELECTRON-MICROSCOPE INVESTIGATION OF GLASS FLOW IN MOS INTEGRATED-CIRCUIT FABRICATION [J].

ARMSTRONG, WE ;

TOLLIVER, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (02) :307-310

[2]

BINDELS JFM, 1981, ISSCC DIGEST TECHNIC, P82

[3]

CROOK DL, 1981, 19TH ANN P REL PHYS, P1

[4]

EATON SS, 1981, ISSCC DIG TECH PAPER, P84

[5]

GERZBERG L, 1980, FAL EL SOC M HOLL

[6]

GROVE AS, 1967, PHYS TECHNOL S, P102

[7]

Kenney G. B., 1976, 14th Annual Proceedings Reliability Physics, P164, DOI 10.1109/IRPS.1976.362737

[8]

KOKKONEN K, 1981, ISSCC DIG TECH PAPER, P80

[9] A FAULT-TOLERANT 256K RAM FABRICATED WITH MOLYBDENUM-POLYSILICON TECHNOLOGY [J].

MANO, T ;

TAKEYA, K ;

WATANABE, T ;

IEDA, N ;

KIUCHI, K ;

ARAI, E ;

OGAWA, T ;

HIRATA, K .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (05) :865-872

[10]

MCKENNY V, 1980, ISSCC, P146

← 1 2 →