Basal plane dislocation-free epitaxy of silicon carbide

被引：86

作者：

Zhang, Z ^{[1
]}

Sudarshan, TS ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 15期

关键词：

D O I：

10.1063/1.2093931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molten KOH etching was implemented on SiC substrates before growing epilayers on them. It was found that the creation of basal plane dislocation (BPD) etch pits on the substrates can greatly enhance the conversion of BPDs to threading edge dislocations during epitaxy, and thus low BPD density and BPD-free SiC epilayers are obtained by this method. The reason why BPD etch pits can promote the earlier conversion is discussed. The SiC epilayer growth by this method is very promising in overcoming forward voltage drop degradation of SiC PiN diodes. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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