Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films

被引：4

作者：

Ding, L. ^{[1
]}

Chen, T. P.

Wong, J. I.

Yang, M.

Liu, Y.

Ng, C. Y.

Liu, Y. C.

Tung, C. H.

Trigg, A. D.

Fung, S.

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 638798, Singapore

[2] Singapore Inst Mfg Technol, Singapore 638075, Singapore

[3] Inst Microelect, Singapore 117685, Singapore

[4] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

D O I：

10.1063/1.2410227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si. (c) 2006 American Institute of Physics.

引用

页数：3

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